Transistors
2SD2504
Silicon
NPN epitaxial planar type
For low-frequency power amplification
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Unit: mm
5.
0±0.
2 4.
0±0.
2
0.
7±0.
1
0.
7±0.
2 12.
9±0.
5
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature Note) *: t = 380 µs Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 10 10 5 9 750 150 −55 to +150 Unit V V V A A mW °C °C
0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 1 2 3
5.
1±0.
2
0.
45+0.
15 ...