|
Part Number
|
IRF6610 |
|
Manufacturer
|
International Rectifier |
|
Description
|
HEXFET Power MOSFET Silicon Technology |
|
Published
|
Apr 25, 2010 |
|
Detailed Description
|
PD - 97012
www.DataSheet4U.com
IRF6610
RDS(on)
Qoss
5.9nC
DirectFET™ Power MOSFET
Typical values (unless otherwise spe...
|
|
Datasheet
|
IRF6610
|
Overview
PD - 97012
www.
DataSheet4U.
com
IRF6610
RDS(on)
Qoss
5.
9nC
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free Low Profile (0.
7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.
FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
VDSS
Qg
tot
VGS
Qgd
3.
6nC
RDS(on)
Qgs2
1.
3nC
20V max ±20V max 5.
2mΩ@ 10V 8.
2mΩ@ 4.
5V
Qrr
6.
4nC
Vgs(th)
2.
1V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT MP
DirectFET™ ISOMETRIC
Des...
Similar Datasheet