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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-89 Plastic-Encapsulate
Transistors
2SD2150
SOT-89
1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3
TRANSISTOR NPN
FEATURES Power dissipation : 0.
5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ...