Part Number
|
WFN1N60 |
Manufacturer
|
Winsemi |
Description
|
Silicon N-Channel MOSFET |
Published
|
Apr 25, 2012 |
Detailed Description
|
Datasheet pdf - http://net/
www.DataSheet.co.kr
WFN1N60
Silicon N-Channel MOSFET
Features
� � � � � 1....
|
Datasheet
|
WFN1N60
|
Overview
Datasheet pdf - http://net/
www.
DataSheet.
co.
kr
WFN1N60
Silicon N-Channel MOSFET
Features
� � � � � 1.
3A,600V, RDS(on)(Max8.
5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.
1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state
resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
VDSS...
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