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WFN1N70

Wisdom technologies
Part Number WFN1N70
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Feb 1, 2016
Detailed Description PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typ...
Datasheet PDF File WFN1N70 PDF File

WFN1N70
WFN1N70

Overview
PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.
0 Ω )@VGS=10V ■ Gate Charge (Typical 5.
0nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1.
Gate{ { 2.
Drain ● ◀▲ ● ● { 3.
Source TO-92 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Pe...


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