Part Number
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FDMS86250 |
Manufacturer
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Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Aug 8, 2013 |
Detailed Description
|
FDMS86250 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86250
October 2014
N-Channel Shielded Gate PowerTrench® MOS...
|
Datasheet
|
FDMS86250
|
Overview
FDMS86250 N-Channel Shielded Gate PowerTrench® MOSFET
FDMS86250
October 2014
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 30 A, 25 mΩ
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.
7 A Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.
8 A Advanced package and silicon combination for low rDS(on) and
high efficiency
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant
A...
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