AOD4104 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
-RoHS Compliant -Halogen Free*
TO-252 D-PAK
Features
VDS (V) = 25V ID = 75A (VGS = 10V) RDS(ON) 3.
6m Ω (VGS = 20V) RDS(ON) 4.
5m Ω (VGS = 12V) RDS(ON) 5.
4m Ω (VGS = 10V) 100% UIS Tested! 100% Rg Tested!
Top View D
Bottom View D
G S S G S G
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G,I Pul...