AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current applications.
-RoHS Compliant -Halogen Free*
TO252 DPAK Top View D D D G S G S G G D S S D G S Bottom View Top View D
Features
VDS (V) = -40V ID = -40A (VGS = -10V) RDS(ON) 15mΩ (VGS = -10V) RDS(ON) 20mΩ (VGS = -4.
5V) 100% UIS Tested! 100% Rg Tested!
TO-251A IPAK Bottom View
D
Absolute Maximum Ratings TC=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltag...