HGTG12N60D1D
April 1995
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
• 12A, 600V • Latch Free Operation • Typical Fall Time 500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The diode used in parallel with the IGBT is an ultrafast (tRR 60ns) ...