Product specification
WNM2016
N-Channel, 20V, 3.
2A, Power MOSFET
V(BR)DSS
Rds(on) 40 @ 4.
5V
20
47 @ 2.
5V 55 @ 1.
8V SOT-23
Descriptions
The WNM2016 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM2016 is Pb-free.
Configuration (Top View)
Features
3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2 = Device Code = Month (A~Z) Marking WT6*
Applications
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