Product specification
WNM2020
N-Channel, 20V, 0.
90A, Small Signal MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.
220@ VGS=4.
5V 0.
260@ VGS=2.
5V 0.
320@ VGS=1.
8V
Descriptions
The WNM2020 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench
(ON)
SOT-23
technology and design to provide excellent RDS
with low gate charge.
This device is suitable for use in DC-DC conversion, load switch and level shift.
Standard Product WNM2020 is Pb-free.
1 G
D 3
2 S
Features
Pin configuration (Top view) z z z z z Trench Technology Supper high density cell design
3
W28*
Excellent ON resistance
1 2
Extremely Low Threshold Voltage Small package SOT-23 W28 = Device Code * = Month (A~Z) Marking
Ap...