Product specification
WNM2023
Single N-Channel, 20V, 3.
2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.
038@ VGS=4.
5V 0.
044@ VGS=2.
5V 0.
052@ VGS=1.
8V SOT-23-3L
Descriptions
D
The WNM2023 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench
(ON)
3
technology and design to provide excellent RDS
with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2023 is Pb-free.
1 G 2 S
Pin configuration (Top view)
Features
z z z z z Trench Technology Supper high density cell design
1
3
W04*
2
Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = ...