BSH111
N-channel enhancement mode field-effect
transistor
Rev.
02 — 26 April 2002
M3D088
Product data
1.
Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
Product availability: BSH111 in SOT23.
2.
Features
s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package.
3.
Applications
s Battery management s High speed switch s Logic level translator.
4.
Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
d
Simplified outline
Symbol
source (s) drain (d)
1 Top view 2
MSB003
g s
MBB076
SOT23
Philips Semiconductors
BSH111
N-c...