GT30J121
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
)
: Eoff = 0.
80 mJ (typ.
) • Low saturation voltage: VCE (sat) = 2.
0 V (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms
VCES VGES
IC ICP
PC
Tj Tstg
600
V
...