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GT30J101

Toshiba Semiconductor
Part Number GT30J101
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching A...
Datasheet PDF File GT30J101 PDF File

GT30J101
GT30J101

Overview
GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.
30 µs (max) Low Saturation Voltage: VCE (sat) = 2.
7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 155 150 −55~150 Unit V V A W °C °C JEDEC JEITA TOSHIBA Weight: 4.
6 g ― ― 2-16C1C 1 2002-01-18 GT30J101 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff Rth (j-c)  Test Condition VGE = ±20 V, VCE ...


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