HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.
0 Ω ID = 4.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 2.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) IDM Drain Current – Pulsed (Note 1) VGS Gate-Source...

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