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HFS4N90

SemiHow
Part Number HFS4N90
Manufacturer SemiHow
Description N-Channel MOSFET
Published Apr 18, 2016
Detailed Description HFS4N90 March 2014 HFS4N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 4.0 A FEATURES ‰ Originative...
Datasheet PDF File HFS4N90 PDF File

HFS4N90
HFS4N90


Overview
HFS4N90 March 2014 HFS4N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 4.
0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 30 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220F 1 21 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 900 4.
0* 2.
3* 16* ρ30 570 4.
0 4.
7 4.
5 PD Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 47 0.
38 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
2.
66 62.
5 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ Units ఁ͠Έ͑ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝;ΒΣΔΙ͑ͣͥ͑͢͡ HFS4N90 Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 2.
0 A͑ 2.
5 -- Off Characteristics BVDSS ԩBVDSS /ԩTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ VDS = 900 V, VGS = 0 V͑ ...


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