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HFS4N50

SemiHow
Part Number HFS4N50
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFS4N50 July 2005 HFS4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 2.0 Ω ID = 3.4 A FEATURES  Originative ...
Datasheet PDF File HFS4N50 PDF File

HFS4N50
HFS4N50

Overview
HFS4N50 July 2005 HFS4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 2.
0 Ω ID = 3.
4 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 2.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 3.
4* 2.
15* 13.
6* ±30 440 3.
4 7.
0 4.
5 PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 28 0.
22 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ.
--- Max.
4.
46 62.
5 Units ℃/W ◎ SEMIHOW REV.
A0,July 2005 HFS4N50 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.
7 A 2.
5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 ...


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