N-Channel MOSFET
HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6* A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON...
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