Ordering number:EN1609D
Features
· Fast switching speed.
· Low saturation voltage.
· Adoption of MBIT process.
NPN Epitaxial Planar Silicon
Transistor
2SC3591
High-Definition CRT Display Horizontal Deflection Output Applications
Package Dimensions
unit:mm 2010C
[2SC3591]
Specifications
JEDEC : TO-220AB EIAJ : SC46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Tc=25˚C
Conditions
Ratings 400 200 6 7 12 4 50 15...