Part Number
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EN29F010 |
Manufacturer
|
Eon Silicon Solution |
Description
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1 Megabit (128K x 8-bit) 5V Flash Memory |
Published
|
Dec 3, 2015 |
Detailed Description
|
EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010
FEATURES
• 5.0V operation for read/write/erase operations
•...
|
Datasheet
|
EN29F010
|
Overview
EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory
EN29F010
FEATURES
• 5.
0V operation for read/write/erase operations
• Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
• Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
• High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s typical
• Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current
• Low Power Active Current - 12mA typical active read current - 30mA pr...
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