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EN29F010

Part Number	EN29F010
Manufacturer	Eon Silicon Solution
Description	1 Megabit (128K x 8-bit) 5V Flash Memory
Published	Dec 3, 2015
Detailed Description	EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory EN29F010 FEATURES • 5.0V operation for read/write/erase operations •...
Datasheet	EN29F010 PDF File

Overview

EN29F010 1 Megabit (128K x 8-bit) 5V Flash Memory EN29F010 FEATURES • 5.
0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: - 8 uniform sectors of 16Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 7µs typical - Sector erase time: 300ms typical - Chip erase time: 3s typical • Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current • Low Power Active Current - 12mA typical active read current - 30mA program/erase current • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend M...

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