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EN29F080

EON
Part Number EN29F080
Manufacturer EON
Description 8 Megabit (1024K x 8-bit) Flash Memory
Published Mar 3, 2009
Detailed Description EN29F080 www.DataSheet4U.com EN29F080 8 Megabit (1024K x 8-bit) Flash Memory FEATURES • 5.0V ± 10%, single power suppl...
Datasheet PDF File EN29F080 PDF File

EN29F080
EN29F080

Overview
EN29F080 www.
DataSheet4U.
com EN29F080 8 Megabit (1024K x 8-bit) Flash Memory FEATURES • 5.
0V ± 10%, single power supply operation - Minimizes system level power requirements • Manufactured on 0.
35 µm process technology • High performance - Access times as fast as 45 ns • • Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: 16 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Group sector protection: Hardware method of locking of sector groups to prevent any program or erase operations within that sector group Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 16s typical • Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby ...


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