3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature • Low voltage operation.
• Superior cross modulation characteristics.
Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel power dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– MPAK-4 2 3 1 4 1.
Source 2...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)