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3SK223

NEC
Part Number 3SK223
Manufacturer NEC
Description RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRAN...
Datasheet PDF File 3SK223 PDF File

3SK223
3SK223

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good.
CM = 101 dBµ TYP.
@ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Type.
2.
9±0.
2 (1.
8) PACKAGE DIMENSIONS (Unit: mm) 2.
8 –0.
3 +0.
2 +0.
2 +0.
2 0.
4 –0.
3 NF2 = 0.
9 dB TYP.
(f = 55 MHz) GPS = 20 dB TYP.
(f = 470 MHz) 0.
85 0.
95 1.
5 –0.
3 2 3 0.
4 –0.
3 0.
4 –0.
3 0.
16 +0.
2 –0.
3 +0.
2 NF1 = 2.
2 dB TYP.
(f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 +0.
2 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 RL ≥ 10 kΩ VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 18 (±10)*1 18 18 25 200 125 –55 to +125 ±8 (±10)*1 V V V V mA mW °C °C 1.
1 0.
8 0.
6 –0.
3 5° 5° V +0.
2 –0.
3 5° 0 to 0.
1 5° 1.
2.
3.
4.
Source Drain Gate 2 Gate 1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields.
Document No.
P10575EJ2V0DS00 (2nd edition) (Previous No.
TD-2268) Date Published August 1995 P Printed in Japan +0.
2 (1.
9) © 1989 1993 3SK223 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure 1 Noise Figure 2 SYMBOL BVDSX MIN.
18 TYP.
MAX.
UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 5 V, VG2S = 4 V, VG1S = 0.
75 V VDS = 6 V, VG2S = 3 V, ID = 10 µA VDS = 6 V, VG1S = 3 V, ID = 10 µA VDS = 0, VG2S = 0, V...


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