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3SK226

Toshiba Semiconductor
Part Number 3SK226
Manufacturer Toshiba Semiconductor
Description Silicon N Channel Dual Gate MOS Type FET
Published Mar 30, 2005
Detailed Description 3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applicati...
Datasheet PDF File 3SK226 PDF File

3SK226
3SK226

Overview
3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm · Superior cross modulation performance.
· Low reverse transfer capacitance: Crss = 0.
015 pF (typ.
) · Low noise figure: NF = 1.
1dB (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.
5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.
013 g (typ.
) Characteristics Gate 1 leakage current Gate 2 leakage current Drain-source voltage Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test Condition Min Typ.
Max I...


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