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3SK224

NEC
Part Number 3SK224
Manufacturer NEC
Description RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TR...
Datasheet PDF File 3SK224 PDF File

3SK224
3SK224

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.
8 dB TYP.
(f = 900 MHz) GPS = 17 dB TYP.
(f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.
4–0.
05 0.
4–0.
05 0.
4–0.
05 0.
16–0.
06 +0.
1 +0.
1 Embossed Type Taping 4 Pins Mini Mold 2.
9±0.
2 (1.
8) 0.
85 0.
95 2 3 4 5° +0.
1 • Suitable for use as RF amplifier in UHF TV tuner.
2.
8–0.
1 +0.
2 1.
5–0.
1 +0.
2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 RL ≥ 10 kΩ VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 18 (±10)*1 18 18 25 200 125 –55 to +125 ±8 (±10)*1 V V V V mA mW °C °C 0.
6–0.
05 +0.
1 1 5° 1.
1–0.
1 0.
8 +0.
2 V 5° 0 to 0.
1 5° 1.
2.
3.
4.
Source Drain Gate 2 Gate 1 Document No.
P10576EJ2V0DS00 (2nd edition) (Previous No.
TD-2265) Date Published August 1995 P Printed in Japan +0.
1 (1.
9) © 1989 1993 3SK224 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure GPS NF 15.
0 17.
0 1.
8 2.
5 dB dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 900 MHz SYMBOL BVDSX MIN.
18 TYP.
MAX.
UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 6 V, VG2S = 3 V, VG1S = 0.
5 V VDS = 6 V, VG2S = 3 V, ID = 10 µA VDS = 6 V, VG1S = 3 V, ID = 10 µA VDS = 0, VG2S = 0, VG1S = ±8 V VDS = 0, VG1S = 0, VG2S = ±8 V VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz IDSX VG1S(off) 0.
5 –1.
5 15.
0 +0.
5 mA V VG2S(off) –1.
0 +1.
0 ±20 ±20 V IG1SS IG2SS |yfs| 18 22 ...


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