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3SK227

Panasonic
Part Number 3SK227
Manufacturer Panasonic
Description Silicon N-Channel 4-pin MOSFET
Published Feb 21, 2014
Detailed Description High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.8 –0.3 +0.2 +0.2 M Di ain ...
Datasheet PDF File 3SK227 PDF File

3SK227
3SK227

Overview
High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.
8 –0.
3 +0.
2 +0.
2 M Di ain sc te on na tin nc ue e/ d s Features 0.
65±0.
15 2.
9±0.
2 1.
9±0.
2 1.
5 –0.
3 0.
65±0.
15 1.
1 –0.
1 +0.
2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg −55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Conditions min 6 typ 0 to 0.
1 Gate 1 to Source voltage VG1S ±8 0.
4±0.
2 0.
8 max 25 VDS = 10V, VG1S = 1V, VG2S = 5V VDS = VG2S = 0, VG1S = ±8V Gate 1 cut-off current Gate 2 cut-off current IG1SS IG2SS ±20 ±20 0.
16 –0.
06 s Absolute Maximum Ratings (Ta = 25°C) co Drain to Source voltage VDSX is Gate 1 to Source cut-off voltage VG1SC VG2SC | Yfs | Coss PG NF Forward transfer admittance ce /D Gate 2 to Source cut-off voltage M ai nt en an Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Power gain Noise figure Pl ea ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od t ni bo yp yp c.
u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e.
io n.
0.
5R 0.
95 4 1 0.
95 3 2 +0.
1 q Low noise-figure (NF) q Large power gain PG q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
Unit mA nA nA V V V nt in VDS = VG1S = 0, VG2S = ±8V ID = 50µA, VG1S = −5V, VG2S = 0 15 VDS = 10V, VG2S = 5V, ID = 100µA −1.
5 0 1 1 VDS = 10V, VG1S = 5V, ID = 100µA VDS = 10V, ID = 10mA, VG2S = 5V, f = 1kHz VDS = 10V, VG1S = VG2S = −5V f = 1MHz 21 26 31 mS...


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