DatasheetsPDF.com

3SK222

NEC
Part Number 3SK222
Manufacturer NEC
Description RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FI...
Datasheet PDF File 3SK222 PDF File

3SK222
3SK222

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good.
CM = 92 dBµ TYP.
@ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.
4 +0.
1 –0.
05 1.
5 +0.
2 –0.
1 2.
8 +0.
2 –0.
3 • Low Noise Figure: • High Power Gain: • Enhancement Type.
NF1 = 1.
2 dB TYP.
(f = 200 MHz) NF2 = 1.
0 dB TYP.
(f = 55 MHz) GPS = 23 dB TYP.
(f = 200 MHz) (1.
8) 0.
85 0.
95 2.
9±0.
2 2 • Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 5° 5° Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1 RL ≥ 10 kΩ VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg ±8 18 (±10)*1 18 18 25 200 125 –55 to +125 ±8 (±10)*1 V 0.
8 V V V V mA mW °C °C 1.
1 +0.
2 –0.
1 0.
4 +0.
1 –0.
05 0.
16 +0.
1 –0.
06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.
6 +0.
1 –0.
05 5° 0 to 0.
1 5° 1.
2.
3.
4.
Source Drain Gate 2 Gate 1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields.
Document No.
P10574EJ2V0DS00 (2nd edition) (Previous No.
TD-2267) Date Published August 1995 P Printed in Japan 4 (1.
9) • Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
3 0.
4 +0.
1 –0.
05 © 1989 1993 3SK222 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure 1 Noise Figure 2 SYMBOL BVDSX MIN.
18 TYP.
MAX.
UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 6 V, VG2S = 3 V, VG1S = 0.
75 V VDS = 6 V, VG2S = 3 V, ID = 10 µA VDS = 6 V, VG2S = ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)