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Part Number
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BF1102R |
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Manufacturer
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Philips |
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Description
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Dual N-channel dual gate MOS-FETs |
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Published
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Feb 29, 2016 |
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Detailed Description
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product spec...
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Datasheet
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BF1102R
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Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product specification Supersedes data of 1999 Jul 01
2000 Apr 11
Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
FEATURES
• Two low noise gain controlled amplifiers in a single package
• Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
PINNING - SOT363
D...
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