DatasheetsPDF.com

2SC4766

Part Number	2SC4766
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Mi...
Datasheet	2SC4766 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ±6 A ICP Collector Current-Pulse ±12 A IB Base Current- Continuous PC Collector Power Dissipation @ T...

Similar Datasheet

2SC4702 NPN TRANSISTOR - Hitachi Semiconductor
2SC4702 NPN Transistor - Renesas
2SC4702 NPN Transistor - Kexin
2SC4703 NPN Transistor - INCHANGE
2SC4703 NPN TRANSISTOR - NEC
2SC4703 NPN SILICON RF TRANSISTOR - CEL
2SC4704 Silicon NPN Transistor - Hitachi Semiconductor
2SC4705 NPN TRANSISTOR - Sanyo Semicon Device
2SC4705 NPN Epitaxial Planar Silicon Transistor - Kexin
2SC4706 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)