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2SC4706

INCHANGE
Part Number 2SC4706
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 17, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Swi...
Datasheet PDF File 2SC4706 PDF File

2SC4706
2SC4706

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 14 A ICM Collector Current-Peak 28 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4706 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; ...


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