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2SC4703

CEL
Part Number 2SC4703
Manufacturer CEL
Description NPN SILICON RF TRANSISTOR
Published Apr 22, 2014
Detailed Description NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLI...
Datasheet PDF File 2SC4703 PDF File

2SC4703
2SC4703

Overview
NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).
This low distortion characteristic makes it suitable for CATV, tele-communication and other use.
It employs surface mount type plastic package, power mini mold (SOT-89).
FEATURES • Low distortion, low voltage: IM2 = 55 dBc TYP.
, IM3 = 76 dBc TYP.
@ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75 • Large Ptot : Ptot = 1.
8 W (Mounted on double-sided copper-clad 16 cm  0.
7 mm (t) ceramic substrate) 2 • Small package : 3-pin power mini mold package ORDERING INFORMATION Part Number NE46234-AZ 2SC4703 NE46234-T1-AZ 2SC4703-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form • 12 mm wide embossed taping • Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales...


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