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2SC4703

NEC
Part Number 2SC4703
Manufacturer NEC
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR ...
Datasheet PDF File 2SC4703 PDF File

2SC4703
2SC4703

Overview
DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).
This low distortion 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 PACKAGE DIMENSIONS (Unit: mm) characteristic makes it suitable for CATV, tele-communication and other use.
It employs surface mount type plastic package, Power Mini Mold (SOT-89).
FEATURES • Low distortion at low supply voltage.
IM2 55 dB TYP.
, IM3 76 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105 dB/75 • Large PT with surface mount type package.
0.
8 MIN.
0.
42 ±0.
06 E 1.
5 C B 0.
42±0.
06 0.
47 ±0.
06 3.
0 0.
41 +0.
05 −0.
03 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 25 12 2.
5 150 1.
8 150 V V V mA W Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) 55 to +150 C C * 0.
7 mm  16 cm2 double sided ceramic substrate.
(Copper plating) Document No.
P10375EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan © 4.
0±0.
25 2.
5±0.
1 1994 2SC4703 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector Capacitance *2 Insertion Gain SYMBOL ICBO IEBO hFE fT Cob S21e2 6.
5 50 6.
0 1.
5 8.
3 8.
5 Noise Figure 2nd Order Intermoduration Distortion 3rd Order Intermoduration Distortion IM3 NF IM2 2.
3 3.
5 dB dB 2.
5 MIN.
TYP.
MAX.
1.
5 1.
5 250 GHz pF dB UNIT TEST CONDITIONS VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 VCE = 5 V, IC = 5 mA *1 VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 50 mA, f = 1 GHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 5 V, IC = 50 mA, f = 1 GHz VCE = 5 V IC = 50 mA, VO = 105 dB/75 VCE = 10 V f = 190 MHz  90 MHz IC = 50 mA, VO = 105 dB/75 VCE = 10 V f = ...


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