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2SC4702

Hitachi Semiconductor
Part Number 2SC4702
Manufacturer Hitachi Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Smal...
Datasheet PDF File 2SC4702 PDF File

2SC4702
2SC4702

Overview
2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.
5 pF Typ.
Outline MPAK 3 1 2 1.
Emitter 2.
Base 3.
Collector 2SC4702 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “XV–”.
Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob Min 300 300 5 — — 60 — — Typ — — — — — — 80 1.
5 Max — — — 0.
1 0.
5 150 — — MHz pF Unit V V V µA V Test co...


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