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2SC4703

INCHANGE
Part Number 2SC4703
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4703 DESCRIPTION ·Low Distortion at Low Supply Voltage. IM2- 5...
Datasheet PDF File 2SC4703 PDF File

2SC4703
2SC4703

Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4703 DESCRIPTION ·Low Distortion at Low Supply Voltage.
IM2- 55 dB TYP.
, IM3- 76 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105dBμ/75Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low distortion ,low noise RF amplifier operating with low supply voltage (VCE = 5V).
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
15 A 1.
8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cuto...


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