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2SC5949

Part Number	2SC5949
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5949 DESCRIPTION ·High Current Capability ·High Power Dissi...
Datasheet	2SC5949 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5949 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Complement to Type 2SA2121 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dis...

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