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ACE7409B

ACE Technology
Part Number ACE7409B
Manufacturer ACE Technology
Description P-Channel 30-V (D-S) MOSFET
Published Jul 16, 2016
Detailed Description ACE7409B P-Channel 30-V (D-S) MOSFET Description The ACE7409B uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File ACE7409B PDF File

ACE7409B
ACE7409B

Overview
ACE7409B P-Channel 30-V (D-S) MOSFET Description The ACE7409B uses advanced trench technology to provide excellent RDS(ON), low gate charge.
This device is suitable for use as a high side switch in SMPS and general purpose applications.
Features  VDS (V) = -30 V  ID =-30A (at VGS=-10V)  < 14mΩ (VGS=-10V)  < 20mΩ (VGS=-4.
5V) Packaging Type Ordering information ACE7333M XX + H Halogen - free Pb - free NN : DFN3*3-8L Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)a TA=25 OC TA=70 OC Drain Current (Pulse)c Power Dissipation b TA=25 OC TA=70 OC Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ,TSTG Limit 30 ±20 30 22 82 25 16 -55 to 150 Units V V A W OC VER 1.
1 1 Electrical Characteristics @TA=25℃ unless otherwise noted ACE7409B P-Channel 30-V (D-S) MOSFET Parameter Symbol Conditions Static Min.
Typ.
Max.
Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=...


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