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ACE7402A

ACE Technology
Part Number ACE7402A
Manufacturer ACE Technology
Description N-Channel Enhancement Mode MOSFET
Published Jul 16, 2016
Detailed Description ACE7402A N-Channel Enhancement Mode MOSFET Description The ACE7402A is the N-Channel logic enhancement mode power field ...
Datasheet PDF File ACE7402A PDF File

ACE7402A
ACE7402A

Overview
ACE7402A N-Channel Enhancement Mode MOSFET Description The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features • 20V/4.
0A, RDS(ON)=65mΩ@VGS=4.
5V • 20V/3.
4A,RDS(ON)=80mΩ@VGS=2.
5V • 20V/2.
8A, RDS(ON) =95mΩ@VGS=1.
8V • Super high density cell design for extremely low RDS (ON) • Exceptional on-resistance and maximum DC current capability Application • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter VER 1.
1 1 ACE7402A N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 2.
4 A 1.
7 Pulsed Drain Current IDM 6 A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA 1.
6 A 0.
33 W 0.
21 -55/150 OC -55/150 OC 105 OC/W Packaging Type SOT-323 3 12 SOT-323 Description 1 Gate 2 Source 3 Drain Ordering information ACE7402A CM + H Halogen - free Pb - free CM : SOT-323 VER 1.
1 2 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Inpu...


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