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ACE7401
Technology Description
P-Channel Enhancement Mode MOSFET
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
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-30V/-2. 8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2. 5A, RDS(ON)=125mΩ@VGS=-4. 5V -30V/-1. 5A, RDS(ON)=170mΩ@VGS=-2. 5V -30V/-1. 0A, RDS(ON)=240mΩ@VGS=-1. 8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
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ACE7401 PDF File
