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ACE7401B

ACE Technology
Part Number ACE7401B
Manufacturer ACE Technology
Description P-Channel Enhancement Mode Field Effect Transistor
Published Jul 16, 2016
Detailed Description ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to ...
Datasheet PDF File ACE7401B PDF File

ACE7401B
ACE7401B

Overview
ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Features  VDS(V)=-30V  ID=-29A (VGS=-10V)  RDS(ON)＜13mΩ (VGS=-20V)  RDS(ON)＜14mΩ (VGS=-10V)  RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) TA=25 OC TA=100 OC Drain Current (Pulse)C Drain Current (Continuous) TA=25 OC TA=75 OC Power Dissipation B TA=25 OC TA=100 OC Power Dissipation A TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDSS -30 V VGSS ±25 V -29 ID -23 IDM -60 A -12 IDSM -9.
7 PD PDSM 29 12 W 3.
1 2 TJ,TSTG -55 to 150 OC Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t≦10s Maximum Junction-to-Ambient AD Steady-State RθJA 30 40 60 75 OC/W Maximum Junction-to-Lead Steady-State RθJL 3.
5 4.
2 VER 1.
2 1 Packaging Type DFN3*3-8L ACE7401B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE7401B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics TA=25 OC unless otherwise noted Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Symbol V(BR)DSS IDSS IGSS RDS(ON) VGS(th) gFS VSD Conditions Static VGS=0V, ID=-250uA VDS=-30V, VGS=0V VGS=±20V, VDS=0V VGS=-20V, ID=-10A VGS=-10V, ID=-10A VGS=-5V, ID=-7A VDS=VGS, IDS=-250µA VDS=-5V, ID=-10A ISD=-1A, VGS=0V IS Switching Qg Qgs Qgd Td(on) tf VDS=-15V, ID=-12A VGS=-10V VDS=-15V, RL=1.
25Ω, VGS=-10V, RGEN=3Ω Min.
-30 -1.
5 Typ.
8.
2 9.
2 13.
1 -1.
8 26 -0...


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