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ACE7407A

ACE Technology
Part Number ACE7407A
Manufacturer ACE Technology
Description P-Channel Enhancement Mode MOSFET
Published Jul 16, 2016
Detailed Description ACE7407A P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field ...
Datasheet PDF File ACE7407A PDF File

ACE7407A
ACE7407A

Overview
ACE7407A P-Channel Enhancement Mode MOSFET Description The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features • -20V/-3.
4A, RDS (ON)= 100mΩ@VGS=-4.
5V • -20V/-2.
4A, RDS (ON)= 125mΩ@VGS=-2.
5V • -20V/-1.
7A, RDS (ON)= 150mΩ@VGS=-1.
8V • -20V/-1.
0A, RDS (ON)= 220mΩ@VGS=-1.
25V • Super high density cell design for extremely low RDS (ON) • Exceptional on-resistance and maximum DC current capability Application • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter VER 1.
1 1 ACE7407A P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -2.
3 A -1.
7 Pulsed Drain Current IDM -6 A Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient IS PD TJ TSTG RθJA -1.
4 A 0.
33 W 0.
21 -55/150 OC -55/150 OC 105 OC/W Packaging Type SOT-323 3 12 SOT-323 Description 1 Gate 2 Source 3 Drain Ordering information ACE7407A CM + H Halogen - free Pb - free CM : SOT-323 VER 1.
1 2 ACE7407A P-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance RDS(ON) Forward ...


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