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60N05

Inchange Semiconductor
Part Number 60N05
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 26, 2016
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain...
Datasheet PDF File 60N05 PDF File

60N05
60N05


Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 38．9 ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
5 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 50 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.
0 4.
0 V VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IS=60A ;VGS= 0 VGS= 10V; ID=20A VGS= 4.
5V; ID=15A VGS= ±20V;VDS= 0 1.
6 V 14 mΩ 18 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 50V; VGS= 0 250 µA DYNAMIC PARAMETERS CISS Input Capacitance 1760 pF COSS Output Capacitance VGS=0V，VDS=25V，f=1.
0MHZ 169 pF CRSS Reverse Transfer Capacitance 123 pF SWITCHING PARAMETERS QG Total Gate Charge QGS Gate to Source Charge QGD Gate to Drain Charge tD(ON) Turn-ON Delay Time tR Rise Time tD(Off) Turn-OFF Delay Time VGS=10V，VDS=25V，ID=20A VDD=25V, VGS=10V, RG=3Ω, RL=1Ω 35.
4 nC 4.
3 nC 10.
5 nC 6.
1 nS 17 nS 29 nS isc websi...


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