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60N03

Anachip
Part Number 60N03
Manufacturer Anachip
Description N-Channel MOSFET
Published Aug 24, 2016
Detailed Description N-Channel Enhancement Mode Power MOSFET AF60N03 „ Features - Simple Drive Requirement - Low Gate Charge - Fast Switchi...
Datasheet PDF File 60N03 PDF File

60N03
60N03

Overview
N-Channel Enhancement Mode Power MOSFET AF60N03 „ Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product „ Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 ID (A) 45 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
„ Pin Assignments (Front View) 3S 2D 1G „ Pin Descriptions Pin Name S G D Description Source Gate Drain „ Ordering information A X 60N03 X X Feature PN Package F :MOSFET D: TO-252 „ Block Diagram Packing Blank : Tube or Bulk A : Tape & Reel DS G This datasheet contains new product information.
Anachip Corp.
reserves the rights to modify the product specification without notice.
No liability is assumed as a result of the use of this product.
No rights under any patent accompany the sale of the product.
Rev.
1.
0 Sep 8, 2005 1/5 N-Channel Enhancement Mode Power MOSFET AF60N03 „ Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Continuous Drain Current, VGS=10V IDM PD TSTG TJ Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25ºC TC=100ºC TC=25ºC Rating 30 ±20 45 32 120 44 0.
352 -55 to 175 -55 to 175 Units V V A A W W/ºC ºC ºC „ Thermal Data Symbol RθJC RθJA Parameter Thermal Resistance Junction-Case Thermal Resistance Junction- Ambient Max.
Max.
Maximum 3.
4 110 Units ºC/W ºC/W „ Electrical Characteristics (TJ=25ºC unless otherwise noted) Symbol Parameter Test Conditions BVDSS ∆BVDSS/∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temp...


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