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60N03

Tuofeng Semiconductor
Part Number 60N03
Manufacturer Tuofeng Semiconductor
Description Power MOSFET
Published Aug 24, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03 Power MOSFET 60 Amps,30Volts N-Channel DPAK Designed for low v...
Datasheet PDF File 60N03 PDF File

60N03
60N03

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd 60N03 Power MOSFET 60 Amps,30Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C Drain Current - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS VGS ID IDM PD TJ, Tstg 30 ±20 60* 120 75 - 55 to 150 Vdc Vdc Adc Watts °C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, IL = 17 Apk, L = 5.
0 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJC RqJA RqJA TL 733 mJ °C/W 1.
65 67 120 260 °C 1.
When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.
127 in2).
2.
When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.
412 in2).
*Chip current capability limited by package.
60 AMPERES 30 VOLTS RDS(on) = 9.
0 mW (Typ.
) N-Channel D G 12 3 4 4 S 1 23 1 60N03 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 24 Vdc) Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 35 Adc) (VGS = 4.
5 Vdc, ID = 20 Adc) Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Forward T...


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