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60N035

ETC
Part Number 60N035
Manufacturer ETC
Description N-Channel Field Effect Transistor
Published Apr 3, 2005
Detailed Description Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear ...
Datasheet PDF File 60N035 PDF File

60N035
60N035

Overview
Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts.
Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features • • • Critical DC Electrical parameters specified at elevated Temp.
Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.
015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp.
0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 60 180 30 ±20 50 0.
4 -65 to 175 Unit A V V W W/°C °C VDSS VGSV PD TJ TSTG Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.
baylinear.
com 60N035 Electrical Characteristics ( TC = Symbol Parameter OFF CHARACTERSTICS Drain source breakdown BVDSS voltage Zero Gate Voltage Drain IDSS Current Gate-Body Leakage Forward IGBLF Gate-Body Leakage Reverse IGBLR ON CHARACTERSTICS VGS RDS(ON) Gate Threshold Voltage Static Drain Voltage 25°C unless otherwise specified) Conditions VGS=0V, ID=250µA VDS=24V VGS=0V VGS=20V VGS=20V VDS=VGS ID=250µA VGS=10V, ID=26A VCS=4.
5V, IO=21A Min 30 Typ Max Units V 10 VDS=0V VDS=0V 1 0.
014 60 100 -100 3 0.
015 0.
025 µA nA nA V Ω A ON-...


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