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60N05

UTC
Part Number 60N05
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Jul 26, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary 60A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N05 is an N...
Datasheet PDF File 60N05 PDF File

60N05
60N05


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 60N05 Preliminary 60A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.
„ FEATURES * RDS(ON)=12mΩ @ VGS=10V,ID=30A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 130nC) „ SYMBOL Power MOSFET „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 60N05L-TA3-T 60N05G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube www.
unisonic.
com.
tw Copyright © 2011 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-716.
a 60N05 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDSS 50 V Drain-Gate Voltage (RGS=20k Ω) VDGR 50 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous TC=25°C TC=100°C ID 60 A 50 A Pulsed (Note 1) IDM 240 A Avalanche Current Avalanche Energy IAR 60 A EAS 600 mJ EAR 150 mJ Power Dissipation Junction Temperature PD 125 W TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width limited by safe operating area „ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.
5 1 UNIT °C/W °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Outpu...


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