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NTE2525

NTE
Part Number NTE2525
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 15, 2016
Detailed Description NTE2524 (NPN) & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter S...
Datasheet PDF File NTE2525 PDF File

NTE2525
NTE2525

Overview
NTE2524 (NPN) & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current and High fT D Excellent Linearity of hFE D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO .
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60V Collector Emitter Voltage, VCEO .
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50V Emitter Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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8A Pulse .
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12A Collector Power Dissipation, PC TA = +25°C .
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1W TC = +25°C .
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20W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product NTE2524 NTE2525 ICBO IEBO hFE fT VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 500mA VCE = 2V, IC = 6A VCE = 5V, IC = 1A Output Capacitance NTE2524 Cob VCB = 10V, f = ...


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