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NTE2535

NTE
Part Number NTE2535
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 15, 2016
Detailed Description NTE2534 (NPN) & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter S...
Datasheet PDF File NTE2535 PDF File

NTE2535
NTE2535

Overview
NTE2534 (NPN) & NTE2535 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage Applications: D Relay Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO .
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90V Collector Emitter Voltage, VCEO .
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80V Emitter Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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12A Pulse .
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20A Collector Power Dissipation (TC = +25°C), PC .
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1W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product Collector–Emitter Saturation Voltage NTE2534 NTE2535 ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB = 80V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 6A VCE = 5V, IC = 1A IC = 6A, IB = 600mA Min Typ Max Unit – – 0.
1 mA – – 0.
1 mA 100 – 280 30 – – – 20 – MHz – – 0.
5 V – – 0.
4 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symb...


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