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ST3414

Stanson Technology
Part Number ST3414
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description ST3414 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File ST3414 PDF File

ST3414
ST3414

Overview
ST3414 N Channel Enhancement Mode MOSFET 4.
0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D GS 12 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L FEATURE z 20V/4.
2A, RDS(ON) = 40mΩ ( Typ.
) @VGS = 4.
5V z 20V/3.
4A, RDS(ON) = 55 mΩ @VGS = 2.
5V z 20V/2.
8A, RDS(ON) = 75 mΩ @VGS = 1.
8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 3 14YA 12 Y: Year Code A: Week Code ORDERING INFORMATION Part Number Package Part Marking ST3414S23RG SOT-23 14YA ※ Week Code : A ~ Z ; a ~ z ※ ST3414S23RG : S23 : SOT23-3L R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com ST3414 2006.
V1 ST3414 N Channel Enhancement Mode MOSFET 4.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM 20 ±12 4.
0 3.
2 30 Continuous Source Current (Diode Conduction) IS 1.
6 Power Dissipation TA=25℃ TA=70℃ PD 1.
25 0.
8 Operation Junction Temperature TJ -55/150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 125 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com ST3414 2006.
V1 ST3414 N Channel Enhancement Mode MOSFET 4.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise not...


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